A research team at the Institute of Composite Semiconductors (ICS) at Cardiff University in the UK has recently developed an ultra-fast and ultra-sensitive avalanche photodiode that has less electronic noise and promises to be a future than traditional silicon diodes. Candidate material for high speed data communication. Avalanche diodes are components that use photoelectric effects to convert light into electricity. According to researchers, ultrasensitive avalanche photodiodes can be used for high-speed data communications, as well as light detection and optical radar ranging systems on self-driving cars.
Professor Diana Huffaker of ICS said that the avalanche photodiodes they developed have high sensitivity and low noise, making them suitable for high-performance receivers for networking and sensing. Researchers use molecular beam epitaxy (MBE) to grow composite semiconductor crystals "one atom at a time". Because of the four different atoms involved, the synthesis of this material is extremely challenging, and new molecular beam epitaxy methods need to be explored.
Researchers say the new avalanche photodiodes can be used to map high-precision maps, geomorphology and seismology, as well as systems that use optical radar or other 3D laser mapping for autonomous vehicles. The newly developed avalanche diode has a higher data transmission rate and distance than the previous generation.
Professor Diana Huffaker said that many industrial predators are interested in their research results. They have already cooperated with companies such as Airbus to apply this technology to future optical communication systems.